| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving adhesiveness (side coverage) of an alloy film to a side face of a groove. SOLUTION: The alloy film 18 is formed by a bias sputter method. In forming the alloy film 18 by the bias sputter method, sputter particles adhering to a second groove 11 and a bottom face of a via hole 12 are flicked by energy of sputter particles scattering toward the second groove 11 and the inner surface of the via hole 12, and RF bias for accelerating the sputter particles is set so that the flicked sputter particles adhere (re-sputter) to the second groove 11 and the side face of the via hole 12 again. COPYRIGHT: (C)2010,JPO&INPIT |
