| 摘要 |
A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer with a first opening; forming a first redistribution layer having a first via with a recess; forming a second insulating layer with a second opening on the first redistribution layer so that the second opening causes a part of the first redistribution layer including the recess to be exposed; depositing a conductive material layer and a photoresist film; irradiating a first area of the photoresist film with first exposure light, and irradiating a second area of the photoresist film with second exposure light, wherein the first area includes the second area and the second area includes an area corresponding to the first via; developing the photoresist film; and causing the conductive material layer to grow through a plating process, thereby forming the second redistribution layer having a second via stacked on the first via.
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