| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of measuring currents flowing through a plurality of single-end sense amplifiers and easily determining variance on threshold value voltages thereof, and a test method for the same. <P>SOLUTION: The semiconductor memory device includes a first bit line LBL for transmitting a signal read from a selected memory cell MC, a first single-end sense amplifier circuit 21 including an amplification element Q1 for amplifying a signal voltage of the first bit line LBL and converting it into an output current, and a control circuit for controlling a test operation for measuring a current flowing through the first sense amplifier circuit (current flowing through an independent ground potential VSSL) independently of currents flowing through other circuit portions. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
