发明名称 |
Method and device for determining backgate characteristics |
摘要 |
<p>Backgate-characteristics determination method and device that make for curtailing the fabrication of semiconductor circuit elements having defective backgate-characteristics. Initially a first C-V curve 30 representing the relation between a voltage applied to the obverse face of a wafer 20 serving as a substrate for semiconductor circuit elements, and its capacitance, is found. Next, a second C-V curve 32 is found through applying a voltage to the reverse face of the wafer 20. The backgate characteristics for the semiconductor circuit elements are determined based on a voltage-shift amount 34 for the wafer 20, found from the first C-V curve 30 and the second C-V curve 32.
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申请公布号 |
EP1376679(A3) |
申请公布日期 |
2010.03.10 |
申请号 |
EP20030011921 |
申请日期 |
2003.05.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YAMASHITA, MASASHI;TSUBOKURA, MITSUTAKA;KIYAMA, MAKOTO |
分类号 |
H01L21/66;G01N27/22;G01N33/00;H01L21/338;H01L29/778;H01L29/80;H01L29/812 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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