发明名称 |
METHOD FOR FABRICATING CAPACITOR |
摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to prevent the bridge of a capacitor by forming a bottom electrode without a cusped part. CONSTITUTION: A sacrificial layer(15) for providing a storage node hole is formed on a substrate(11). A conductive layer is formed along the step of an overall structure including a storage node hole. A protective layer(19A) for filling the storage node hole is formed on the conductive layer inside the storage node hole. The conductive layer is separated using the wet etching. The protective layer and the sacrificial layer are removed with a dip-out.
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申请公布号 |
KR20100026188(A) |
申请公布日期 |
2010.03.10 |
申请号 |
KR20080085096 |
申请日期 |
2008.08.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, JUN DONG;LEE, NAM IL;SUH, YOO JIN |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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