INTEGRATED BI-MOS RADIATION DETECTOR CELL

摘要

FIELD: physics; semiconductors. ^ SUBSTANCE: invention relates to semiconductor coordinate detectors of particle radiations. The invention proposes a coordinate detector which uses active pixels with functionally integrated bipolar and MOS structures. This enables retention of high coefficient of amplification of ionisation current induced by particles with different noise reduction caused by surface states at the oxide-semiconductor boundary surface owing to optimum control of the surface potential using an insulated gate. ^ EFFECT: invention increases sensitivity of coordinate detectors and increases the signal to noise ratio. ^ 3 dwg, 1 ex