SILICON NANOCRYSTALINE STRUCTURE FROM AMORPHOUS SILICON FILM USING FOCUSED ELECTRON-BEAM AND METHOD FOR PREPARING THE SAME

摘要

PURPOSE: A manufacturing method of nanocrystalline structure and a silicon nanocrystalline structure manufactured thereby are provided to adjust a position, size and structure of nanocrystalline silicon by irradiating a focused electron-beam on the silicon nanocrystalline structure. CONSTITUTION: A manufacturing method of nanocrystalline structure includes a step for depositing an amorphous silicon thin film in which aluminum is added on a silicon wafer and a step for forming the silicon nanocrystalline by irradiating a focused electron-beam on a silicon nanocrystalline structure. A nano-crystalline formation step is operated in 200~400 °C. The electric current density of the irradiated focused electron-beam is 15 ~ 30 pA/cm. The silicon nanocrystalline structure is silicon nanotips.