发明名称 LED having a reflector layer of improved contact ohmicity
摘要 An LED has a light-generating semiconductor region formed on a baseplate via an electroconductive reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types for generating light. For good ohmic contact with the light-generating semiconductor region without any substantive diminution of reflectivity compared to that of unalloyed silver, the reflector layer is made from a silver-base alloy containing a major proportion of silver and at least either one of copper, gold, palladium, neodymium, silicon, iridium, nickel, tungsten, zinc, gallium, titanium, magnesium, yttrium, indium, and tin.
申请公布号 US7675070(B2) 申请公布日期 2010.03.09
申请号 US20070619079 申请日期 2007.01.02
申请人 SANKEN ELECTRIC CO., LTD. 发明人 AOYAGI HIDEKAZU;OTSUKA KOJI
分类号 H01L27/15;H01L31/12;H01L33/00;H01L33/10;H01L33/32;H01L33/50 主分类号 H01L27/15
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