发明名称 |
Electromechanical non-volatile memory devices |
摘要 |
Electromechanical non-volatile memory devices are provided including a semiconductor substrate having an upper surface including insulation characteristics. A first electrode pattern is provided on the semiconductor substrate. The first electrode pattern exposes portions of a surface of the semiconductor substrate therethrough. A conformal bit line is provided on the first electrode pattern and the exposed surface of semiconductor substrate. The bit line is spaced apart from a sidewall of the first electrode pattern and includes a conductive material having an elasticity generated by a voltage difference. An insulating layer pattern is provided on an upper surface of the bit line located on the semiconductor substrate. A second electrode pattern is spaced apart from the bit line and provided on the insulating layer pattern. The second electrode pattern faces the first electrode pattern.
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申请公布号 |
US7675142(B2) |
申请公布日期 |
2010.03.09 |
申请号 |
US20070876111 |
申请日期 |
2007.10.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN EUN-JUNG;LEE SUNG-YOUNG;KIM MIN-SANG;KIM SUNG-MIN |
分类号 |
H01L29/84 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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