| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of attaining a TFT of low power consumption, which has a small gate overlap width and responds at high speed at inexpensively, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device 10 includes a gate electrode 12 formed on a substrate 11, a gate insulating film 13 formed so as to cover the gate electrode 12, a source electrode 14 formed by plating on the substrate 11 and nearby the gate electrode 12, a drain electrode 15 formed by plating on the substrate 11 and nearby the gate electrode 12 to be disposed oppositely to the source electrode 14 across the gate electrode 12, and a semiconductor film 16 formed so as to cover the source electrode 14, drain electrode 15 and gate insulating film 13, wherein the substrate 11 contains a plating catalyst, and the source electrode 14 and drain electrode 15 are formed in direct contact with the plating catalyst. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
