| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with buried wiring that suppresses diffusion of the component of a cap metal layer formed on a Cu wiring layer onto an interlayer insulating film and also suppresses an increase in connection resistance. SOLUTION: On a bottom surface of a connection hole 8 formed on the metal cap layer 6 consisting of a Cu wiring portion CL1, a silicide region 6s, and a non-silicide region 6n, a barrier metal layer 13a and the silicide region 6s of the cap metal layer 6 are selectively removed through Ar sputtering processing. At this time, a sputtering time of Ar is adjusted to leave the non-silicide region 6n of the cap metal layer 6 on the bottom surface of the connection hole 8. Then re-formation processing for a barrier metal layer is performed, and a Cu seed layer and a Cu plating layer are formed to form a second Cu wiring portion to be buried in the connection hole 8 and groove 9 for wiring finally. COPYRIGHT: (C)2010,JPO&INPIT
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