| 摘要 |
A semiconductor device and a method of manufacturing the same includes forming trenches in a semiconductor substrate, and then forming spacers composed of a first polysilicon layer in the trench, and then forming a second polysilicon layer over the spacers and filling the trench. Therefore, even in case of a power MOSFET device having a small line width and a high aspect ratio, generation of voids in the polysilicon when forming a gate is prevented, and thus, device reliability is enhanced.
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