发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.
申请公布号 US2010051902(A1) 申请公布日期 2010.03.04
申请号 US20070515384 申请日期 2007.10.24
申请人 HIURA HIDEFUMI;TOGUCHI SATORU;TADA TETSUYA;KANAYAMA TOSHIHIKO 发明人 HIURA HIDEFUMI;TOGUCHI SATORU;TADA TETSUYA;KANAYAMA TOSHIHIKO
分类号 H01L51/52;H01L33/00;H01L51/56 主分类号 H01L51/52
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