BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a bipolar semiconductor device which is capable of reducing the surface state density of a bipolar transistor and increasing the current gain of the transistor, thereby improving the transistor performance.  A bipolar semiconductor device (100) has a surface protective film (30) on the surface of a semiconductor element.  The surface protective film is composed of a thermal oxide film (31) formed on the surface of the semiconductor element, and a deposited oxide film (32) formed on the thermal oxide film.  The deposited oxide film contains at least one of hydrogen element and nitrogen element in an amount of not less than 1018 cm-3.