| 摘要 |
A salicide heater structure for use in thermo-optic and other heat-influenced semiconductor devices is disclosed. In one example embodiment, a system is provided that includes a silicon substrate, and a salicide heating element formed on the substrate, for delivering heat radiation to a heat-influenced semiconductor device. Another example embodiment is a salicide semiconductor system that includes a silicon substrate and a salicide structure formed on the substrate, wherein the salicide structure is for delivering heat radiation to a heat-influenced semiconductor device.
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