| 摘要 |
<p>PURPOSE: A resistance memory device and a manufacturing method thereof are provided to operate stable switching operation by forming a resistance variable material layer into a structure laminated by a transition metal oxide with an impurity and with no impurity. CONSTITUTION: An active area(14) is formed on a silicon substrate(12) and is defined by an element isolation film(16). A gate electrode(20) and a source/drain region are formed on the active area. A source line(27) is connected to the first source/drain region of a cell transistor. A resistance variable material layer is connected to the second source/drain region of the cell transistor. The resistance variable material layer comprises a doped metal oxide layer and an undoped metal oxide layer. The upper electrode(35) is formed on the resistance variable material layer.</p> |
