| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of suppressing the generation of polymer residue and variation in etching process. Ž<P>SOLUTION: A patterned hard mask layer HM is formed on the upper surface of a Low-k film II2. The Low-k film II2 is etched using the hard mask layer HM as a mask to form a groove TR for wiring layer on the Low-k film II2. The hard mask layer HM is removed in the chamber same as the chamber where the etching for forming the groove TR for wiring is formed, thereby exposing the upper surface of the Low-k film II2. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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