| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating nanodots at low temperature through a small number of processes, to provide a floating gate transistor having the nanodots, and to provide a method of fabricating the same. SOLUTION: A coaxial type vacuum arc vapor deposition source 1 is used to fabricate the nanodots 33, which are buried in an insulating layer 34 and hold electric charges, from a metal material or semiconductor material. The method includes the processes of forming an oxide film 32 on a substrate 31, fabricating the nanodots 33 on the oxide film 32, burying the nanodots by forming the insulating layer 34 on the nanodots, and forming an electrode film 35 on the insulating layer 34, thereby fabricating the floating gate transistor. COPYRIGHT: (C)2010,JPO&INPIT |
