发明名称 |
HIGH DENSITY RESISTANCE BASED SEMICONDUCTOR DEVICE |
摘要 |
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a plurality of memory cells located between word lines and bit lines. Each memory cell comprises a diode and a plurality of memory elements each comprising one or more metal-oxygen compounds, the diode and the plurality of memory elements arranged in electrical series along a current path between a corresponding word line and a corresponding bit line.
|
申请公布号 |
US2010054014(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20080204515 |
申请日期 |
2008.09.04 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LEE MING-DAOU;LAI ERH-KUN;HSIEH KUANG YEU |
分类号 |
G11C11/00;H01L21/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|