| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing operating method that suppresses temporal deterioration in processing dimensional accuracy caused by temporal variations in wafer temperature so as to maintain high-accuracy etching. Ž<P>SOLUTION: Concerning a heater-temperature control electrode, a change waveform of controlled heater power after the start of the plasma processing is logged and a controlled temperature or fill pressure of heat-transfer gas, filled in the wafer rear-face, is adjusted so as to suppress a change of the waveform with respect to a reference value. Concerning a refrigerant-temperature control electrode, a change waveform of a temperature sensor signal after the start of the plasma processing is logged and the controlled temperature or the fill pressure of the heat-transfer gas, filled in the wafer rear-face, is adjusted by temporal changes of the waveform. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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