| 摘要 |
<P>PROBLEM TO BE SOLVED: To adjust specific resistance of a sputtering target comprising In, Ga and Zn to 2.0×10<SP>-2</SP>Ωcm or less so as to enable formation of a Zn<SB>x</SB>Ga<SB>y</SB>In<SB>z</SB>O<SB>(x+3y/2+3z/2)</SB>thin film by DC sputtering. <P>SOLUTION: The sputtering target can achieve a low resistance by forming a two-phased crystal structure comprising In<SB>x</SB>O<SB>3</SB>and Zn<SB>z</SB>Ga<SB>y</SB>O<SB>4</SB>phases. The two-phased structure can be achieved through firing at a temperature equal to or above 1,100°C but below 1,250°C in a reducing atmosphere or in a closed space substantially free of oxygen supply. A specific resistance of 2.0×10<SP>-2</SP>Ωcm or less can be stably achieved regardless of density value, even at a high density range where the relative density is more than 90%. <P>COPYRIGHT: (C)2010,JPO&INPIT |
