发明名称 Thin film transistor substrate for display unit
摘要 A thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed one surface of the plastic insulation substrate; and a TFT comprising a second silicon nitride layer formed with a second refractive index smaller than the first refractive index on the first silicon nitride layer. Thus, the present invention provides a TFT substrate wherein there is reduced a problem in that thin films are lifted from a plastic insulation substrate.
申请公布号 US7671364(B2) 申请公布日期 2010.03.02
申请号 US20060489144 申请日期 2006.07.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE WOO-JAE;HONG MUN-PYO;KIM BYOUNG-JUNE;YANG SUNG-HOON
分类号 H01L29/786 主分类号 H01L29/786
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