VOLTAGER SUPPLIER FOR DRAIN SELECT LINE OF NON VOLATILE MEMORY DEVICE AND READING/VERIFYING METHOD THEREOF

摘要

PURPOSE: A voltage supply unit for the drain selection line of a non-volatile memory device and a method for reading/verifying the same are provided to block a connection between bit-lines and non-selected memory cell blocks by blocking a connection between a cell string and a sensor node. CONSTITUTION: Bit lines are pre-charged. A negative voltage is applied to the drain selection line of non-selected memory cell blocks(610). A connection between bit-lines and a cell string is blocked. A connection between bit-lines and a sensor node is blocked(620). The voltage level of the bit-lines is changed according to the state of cells to be read. Data is stored in a data latch part according to the voltage level of the sensor node by connecting the bit-lines and the sensor node(630).