发明名称 Method for producing doped regions in a substrate, and photovoltaic cell
摘要 Method for producing doped regions on the rear face of a photovoltaic cell. A doping paste with a first type of conductivity is deposited on a rear face of a semiconductor-based substrate according to a pattern consistent with the desired distribution of regions doped with the first type of conductivity. Then, an oxide layer is deposited at least on the portions of the rear face of the substrate not covered with the doping paste. Finally, an annealing of the substrate diffuses the doping agents in the substrate and forms doped regions under the doping paste.
申请公布号 US7670937(B2) 申请公布日期 2010.03.02
申请号 US20070851818 申请日期 2007.09.07
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 VESCHETTI YANNICK;BETTINELLI ARMAND
分类号 H01L21/38 主分类号 H01L21/38
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