发明名称 HIGH VOLTAGE GENERATING CIRCUIT
摘要 PURPOSE: A high voltage generating circuit is provided to store a high voltage by designing differently the volume of capacitors for a charge pump based on the volume of a pre-charged voltage in order to reduce the size of the circuit. CONSTITUTION: A pump state generates a high voltage signal according to an input voltage, a first and a second clock signals. A first pump stage(110) pumps a first voltage and stores the first voltage in a first capacitor(C1). The first voltage is transmitted to a second pump stage(120). The second pump stage pumps a second voltage which is larger than the first voltage and stores the second voltage in a second capacitor(C2). The volume of the second capacitor is large than the volume of the first capacitor.
申请公布号 KR20100022227(A) 申请公布日期 2010.03.02
申请号 KR20080080800 申请日期 2008.08.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 WANG, IN SOO
分类号 G11C16/30;G11C5/14 主分类号 G11C16/30
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