发明名称 A PRECURSOR COMPOSITION, METHOD OF FORMING A LAYER, METHOD OF MANUFACTURING A GATE STRUCTURE AND METHOD OF MANUFACTURING A CAPACITOR
摘要 PURPOSE: A precursor composition, a method of forming a layer, a method of manufacturing a gate structure and a method of manufacturing a capacitor are provided to form an excellent step coverage by using a precursor having improved thermal stability. CONSTITUTION: A stabilized precursor is provided on a substrate through a thin film forming method(S120). The precursor and an covalent bond compound are contacted with each other. The precursor comprises a core metal and a ligand. The Ligand is combined with a core metal. A reactant is provided on the substrate(S130). The reactant is combined with the core metal of the precursor.
申请公布号 KR20100022441(A) 申请公布日期 2010.03.02
申请号 KR20090076213 申请日期 2009.08.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, YOUN JOUNG;KIM, YOUN SOO;CHO, KYU HO;LEE, JUNG HO;CHOI, JAE HYOUNG;RYU, SEUNG MIN
分类号 H01L21/205;H01L21/8242;H01L27/108 主分类号 H01L21/205
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