发明名称 |
A PRECURSOR COMPOSITION, METHOD OF FORMING A LAYER, METHOD OF MANUFACTURING A GATE STRUCTURE AND METHOD OF MANUFACTURING A CAPACITOR |
摘要 |
PURPOSE: A precursor composition, a method of forming a layer, a method of manufacturing a gate structure and a method of manufacturing a capacitor are provided to form an excellent step coverage by using a precursor having improved thermal stability. CONSTITUTION: A stabilized precursor is provided on a substrate through a thin film forming method(S120). The precursor and an covalent bond compound are contacted with each other. The precursor comprises a core metal and a ligand. The Ligand is combined with a core metal. A reactant is provided on the substrate(S130). The reactant is combined with the core metal of the precursor.
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申请公布号 |
KR20100022441(A) |
申请公布日期 |
2010.03.02 |
申请号 |
KR20090076213 |
申请日期 |
2009.08.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, YOUN JOUNG;KIM, YOUN SOO;CHO, KYU HO;LEE, JUNG HO;CHOI, JAE HYOUNG;RYU, SEUNG MIN |
分类号 |
H01L21/205;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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