发明名称 |
Semiconductor memory device and method of programming the same |
摘要 |
Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.
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申请公布号 |
US7672154(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20080073678 |
申请日期 |
2008.03.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG IN-JUN;SHIN HYUNG-SOON;LEE SEUNG-JUN;SEO SUN-AE;KIM KEE-WON;KIM KWANG-SEOK |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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