发明名称 Semiconductor memory device and method of programming the same
摘要 Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.
申请公布号 US7672154(B2) 申请公布日期 2010.03.02
申请号 US20080073678 申请日期 2008.03.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG IN-JUN;SHIN HYUNG-SOON;LEE SEUNG-JUN;SEO SUN-AE;KIM KEE-WON;KIM KWANG-SEOK
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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