发明名称 SINTERED SILICON WAFER
摘要 <p>Provided is a sintered silicon wafer having a maximum crystal grain diameter of 20μm or less, an average crystal grain diameter of 1μm or more but not more than 10μm. The sintered silicon wafer has the following mechanical characteristics when a plurality of test samples taken from a silicon wafer having a diameter of 400mm or more are measured; an average deflecting strength of 20kgf/mmor more but not more than 50kgf/mmwhen measured by three-point bending method, an average tensile strength of 5kgf/mmor more but not more than 20kgf/mm, and an average Vicker's hardness of Hv800 or more but not more than Hv1,200. The sintered wafer has a certain strength and mechanical properties similar to those of a single crystal silicon, even when it is a large disc-like sintered silicon wafer.</p>
申请公布号 KR20100022519(A) 申请公布日期 2010.03.02
申请号 KR20107000517 申请日期 2008.07.04
申请人 NIPPON MINING&METALS CO., LTD. 发明人 SUZUKI RYO;TAKAMURA HIROSHI
分类号 C01B33/02 主分类号 C01B33/02
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