PLASMA PROCESSING APPARATUS AND METHOD THEREOF

摘要

PURPOSE: A plasma processing apparatus and a method thereof are provided to uniformly maintain the plasma in the pulse on and pulse off by applying a plasma maintaining power. CONSTITUTION: A chamber processes a semiconductor substrate by generating the plasma. Top and bottom electrodes(13, 14) are arranged inside the chamber. A first radio frequency power source(21) applies a first radio frequency power either of the top and bottom electrode in pulse mode. A second harmonic wave power source(22) applies a second high frequency power either of the top and bottom electrode in the other one to the persistence mode. A Controller controls the first and second harmonic wave powers. The first radio frequency power is the source power for the plasma production at the low pressure band. The duty ratio of the first radio frequency power is 20~90%.