发明名称 Hafnium doped cap and free layer for MRAM device
摘要 A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layers whose magnetostriction constants are of opposite sign, thereby largely canceling one another.
申请公布号 US7672093(B2) 申请公布日期 2010.03.02
申请号 US20060582244 申请日期 2006.10.17
申请人 MAGIC TECHNOLOGIES, INC. 发明人 HORNG CHENG T.;TONG RU-YING;TORNG CHYU-JIUH;KULA WITOLD
分类号 G11B5/39;G11B5/127 主分类号 G11B5/39
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