| 摘要 |
PURPOSE: An oxide semiconductor and a thin film transistor comprising the same are provided to use an oxide semiconductor in a channel region by adding a new material to a Zn oxide. CONSTITUTION: An oxide semiconductor adds a lanthanum series substance to a Zn oxide series compound. The lanthanum series substance is selected from a group comprised of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and a compound. The compound contains at least two kind of elements. Zn oxide series compound is one of a Zn oxide, an In-Zn oxide or a Ga-In-Zn oxides. The oxide semiconductor is an amorphous oxide semiconductor.
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