发明名称 |
Design and fabrication of rugged FRED, power MOSFET or IGBT |
摘要 |
An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junction has an avalanche voltage equal to or lower than an avalanche voltage of the peripheral field spreading region so substantially the entire said main PN junction participates in avalanche conduction. This rugged FRED structure can also be formed in MOSFETS, IGBTS and the like.
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申请公布号 |
US7671410(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20060614897 |
申请日期 |
2006.12.21 |
申请人 |
MICROSEMI CORPORATION |
发明人 |
ZHAO SHANQI;SDRULLA DUMITRU |
分类号 |
H01L29/76;H01L21/329;H01L29/06;H01L29/417;H01L29/861 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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