| 摘要 |
FIELD: physics; optics. ^ SUBSTANCE: two-section laser based on AlGaAs/GaAs compounds includes an n-type GaAs substrate bordered by two mirrors with absorption and amplifying sections on the substrate. The sections are insulated from each other by a gap made from semiconductor material implanted with heavy ions. Each section has on the said substrate series-arranged n-type GaAs buffer layer, an AlGaAs transitional layer with gradient composition, a bottom n-type AlGaAs emitter layer, the GaAs bottom part of a waveguide layer, 5-15 layers of vertically correlated quantum dots separated by GaAs layers, the top part of the waveguide layer, a p-type AlGaAs top emitter layer, a top transitional layer with gradient composition and a p-type GaAs contact layer. Each layer of vertically correlated quantum dots has an array of quantum dots self-organised from an InAs layer and imperforated by an InGaAs layer. ^ EFFECT: reduced threshold current density and increased stability with retention of high differential efficiency. ^ 7 cl, 9 dwg |
