| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing silicon carbide single crystal in which insulation is further raised, and to provide an apparatus of manufacturing the silicon carbide single crystal. Ž<P>SOLUTION: A heating furnace which holds a crucible includes a first member 121 and a second member 122, wherein a first space portion 310 is formed in a linkage portion of the first member 121 and the second member 122. A depression 121a and an aeration way 121b are formed in the first member 121, and a sealing member 320 is arranged so as to surround the depression 121a in the first member 121 of the linkage portion. The aeration way 121b discharges gas in the first space portion 310 to an external of an accommodating member 100, pressure inside the first space portion 310 is made lower than pressure inside the accommodating member 100, thereby indraft of open air into the accommodating member 100 is inhibited. Moreover, indraft of open air into the accommodating member 100 may be inhibited by filling the first space portion 310 with inert gas. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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