| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having a split gate type nonvolatile memory cell of source-side implantation system, which can be formed in a single-layer polysilicon process. Ž<P>SOLUTION: The memory cell includes a first memory cell unit U1 having first and second diffusion regions 2 and 3 formed on a surface of a p-type semiconductor substrate 1, and first and second gate electrodes 6 and 7 separately formed on a first channel region 4 between the first and second diffusion regions with a gate insulating film 5 interposed, a second memory cell unit U2 having third and fourth diffusion regions 9 and 10 formed on a surface of an n-type well 8 and a third gate electrode 12 formed on a second channel region 11 between the third and fourth diffusion regions with the gate insulating film 5 interposed, and a control terminal CG electrically connected to the second channel region, wherein the first to third electrodes are formed of the same electrode material layer, and a floating gate FG capacitively coupled to the control terminal CG is formed by electrically connecting the second and third gate electrodes. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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