| 摘要 |
PROBLEM TO BE SOLVED: To provide a process flow for fabricating shallow trench isolation (STI) devices with direct body tie contacts. SOLUTION: The process flow follows steps similar to standard STI fabrication methods except that in one of the etching steps, body tie contacts 222 are etched through the nitride layer 210 and STI oxide layer 206, directly to the body tie 204. This process flow provides a direct body tie contact 222 to mitigate floating body effects but also eliminates hysteresis and transient upset effects common in non-direct body tie contact configurations, without the critical alignment requirements and critical dimension control of the layout. COPYRIGHT: (C)2010,JPO&INPIT |
