| 摘要 |
PROBLEM TO BE SOLVED: To evaluate crystallinity of a semiconductor thin film with accuracy, regardless of the fluctuations of the thickness and dielectric constant of a base material. SOLUTION: This device is equipped with: an excitation light source 6 for irradiating excitation light onto the surface of a p-Si semiconductor thin film 3; a microwave radiating part 7 for irradiating a microwave to the p-Si semiconductor thin film 3; a detection part 8, capable of detecting intensity of a direct-current component fluctuating due to the dielectric constant and the thickness of a glass substrate 2, and the intensity of an alternating-current component, fluctuating due to the dielectric constant, the thickness and generation of a carrier, in the reflected waves of the microwave from the p-Si semiconductor thin film 3; and a computer 9 for storing index data, showing crystallinity of the p-Si semiconductor thin film by using as parameters, the intensity of the direct-current component measured beforehand relative to a sample 4 set so as to have a known dielectric constant, thickness and crystallinity, and a peak value of the intensity of the alternating-current component, and evaluating the crystallinity of the p-Si semiconductor thin film 3, based on the peak values of the intensity of the direct-current component and the intensity of the alternating-current component detected by the detection part 8 and the index data. COPYRIGHT: (C)2010,JPO&INPIT
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