发明名称 |
Silicon interposer including backside inductor |
摘要 |
Disclosed is a silicon interposer that can reduce the entire area of a semiconductor package and increase the degree of integration by forming inductors at a lower part in addition to an upper part of a silicon substrate. The silicon interposer includes a silicon substrate, an upper inductor layer formed at the upper part of the silicon substrate and a lower inductor layer formed at the lower part of the silicon substrate. |
申请公布号 |
US8723292(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201213493458 |
申请日期 |
2012.06.11 |
申请人 |
BAE HYUN-CHEOL;CHOI KWANG-SEONG;MOON JONG TAE;PARK JONG-MOON;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
BAE HYUN-CHEOL;CHOI KWANG-SEONG;MOON JONG TAE;PARK JONG-MOON |
分类号 |
H01L27/08 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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