发明名称 Silicon interposer including backside inductor
摘要 Disclosed is a silicon interposer that can reduce the entire area of a semiconductor package and increase the degree of integration by forming inductors at a lower part in addition to an upper part of a silicon substrate. The silicon interposer includes a silicon substrate, an upper inductor layer formed at the upper part of the silicon substrate and a lower inductor layer formed at the lower part of the silicon substrate.
申请公布号 US8723292(B2) 申请公布日期 2014.05.13
申请号 US201213493458 申请日期 2012.06.11
申请人 BAE HYUN-CHEOL;CHOI KWANG-SEONG;MOON JONG TAE;PARK JONG-MOON;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 BAE HYUN-CHEOL;CHOI KWANG-SEONG;MOON JONG TAE;PARK JONG-MOON
分类号 H01L27/08 主分类号 H01L27/08
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