发明名称 CIRCUIT AND METHOD FOR MEASURING THE PERFORMANCE PARAMETERS OF TRANSISTORS
摘要 An integrated circuit may include an inverter which may include a first transistor of a first conductivity type and a second transistor of a second conductivity type connected in parallel with the first transistor. An input of the inverter may be capable of receiving an oscillating input signal, and which may include an output of the inverter, which is connected to a capacitive device capable of being charged and discharged depending on the state of the first and second transistors being on or off. The inverter may be capable of delivering an oscillating output signal at its output. The integrated circuit may include a selector for transmitting the oscillating output signal and for masking the charging and/or discharging of the capacitive device.
申请公布号 US2010045390(A1) 申请公布日期 2010.02.25
申请号 US20090543162 申请日期 2009.08.18
申请人 STMICROELECTRONICS SA 发明人 BARASINSKI SEBASTIEN
分类号 H03K3/03;G01R31/02 主分类号 H03K3/03
代理机构 代理人
主权项
地址