A METHOD OF ION IMPLANTATION TO REDUCE TRANSIENT ENHANCED DIFFUSION
摘要
A method of ion implantation comprises the steps of: providing a semiconductor substrate; performing a pre-amorphisation implant in the semiconductor substrate in a direction of implant at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate, and performing an implant of a dopant in the semiconductor substrate to provide a shallow junction. In a feature of the invention, the method further comprises performing an implant of a defect trapping element in the semiconductor substrate and the pre-amorphisation implant step is performed at a first implant energy and the implant of a defect trapping element is performed at a second implant energy, the ratio of the first implant energy to the second implant energy being in the range of 10-40%.
申请公布号
WO2006064282(A8)
申请公布日期
2010.02.25
申请号
WO2005GB04925
申请日期
2005.12.19
申请人
APPLIED MATERIALS, INC.;GRAOUI, HOUDA;FOAD, MAJEED, ALI;AL-BAYATI, AMIR