| 摘要 |
The invention, in one aspect, provides a semiconductor device (100), including transistors (105), dielectric layers (115, 120) located over the transistors (105), interconnects (122) formed within the dielectric layers (115, 120), and a test structure (130) located adjacent a hot-spot (125) of the semiconductor device (100) and configured to monitor a real-time operational parameter of at least one of the transistors (105) or interconnects (122).
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