发明名称 |
3D INTEGRATED CIRCUIT DEVICE FABRICATION WITH PRECISELY CONTROLLABLE SUBSTRATE REMOVAL |
摘要 |
A method is provided for fabricating a 3D integrated circuit structure. According to the method, a first active circuitry layer wafer is provided. The first active circuitry layer wafer comprises a P+ portion covered by a P− layer, and the P− layer includes active circuitry. The first active circuitry layer wafer is bonded face down to an interface wafer that includes a first wiring layer, and then the P+ portion of the first active circuitry layer wafer is selectively removed with respect to the P− layer of the first active circuitry layer wafer. Next, a wiring layer is fabricated on the backside of the P− layer. Also provided are a tangible computer readable medium encoded with a program for fabricating a 3D integrated circuit structure, and a 3D integrated circuit structure.
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申请公布号 |
US2010044826(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20080194065 |
申请日期 |
2008.08.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FAROOQ MUKTA G.;HANNON ROBERT;IYER SUBRAMANIAN S.;KOESTER STEVEN J.;PURUSHOTHAMAN SAMPATH;YU ROY R. |
分类号 |
H01L21/50;H01L21/67;H01L27/12 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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