SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element including an n-type clad layer having characteristics required for an n-type clad layer or a p-type clad layer having characteristics required for a p-type clad layer. SOLUTION: An n-type first clad layer 12A has higher n-type carrier density than an n-type second clad layer 12B, and is also made thicker than the n-type second clad layer 12B to thereby secure the carrier conductivity of the whole n-type clad layer 12. The n-type second clad layer 12B has a higher conduction band sub-level lower end than an active layer 14 to thereby secure a sufficient electron barrier for carrier confinement and also suppress type II light emission. COPYRIGHT: (C)2010,JPO&INPIT