发明名称 METHOD FOR SPECIFYING SPECIFIC RESISTANCE OF OXIDE FILM, METHOD FOR DESIGNING OXYGEN DEFECT STRUCTURE OF THE OXIDE FILM AND PROGRAM FOR SIMULATING SPECIFIC RESISTANCE OF THE OXIDE FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for verifying a relation between a state of an oxygen loss of an oxide film, which is sandwiched and formed between two conductive regions and specific resistance of the oxide film. Ž<P>SOLUTION: The method includes steps of S1 to S5 and specifies the specific resistance of the oxide film, having oxygen loss which is sandwiched between the facing first and second conductive regions. S1 is a step of setting a structure of the first conductive region; S2 is a step of setting a structure of the second conductive region; S3 is a step of setting a structure of the oxide film; S4 is a step of calculating an electronic sate of the oxide film based on structure information which is set in S1 to S3; and S5 is a step of calculating the specific resistance, of a film in a perpendicular direction of the oxide film, based on the electronic state calculated in S4. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010045183(A) 申请公布日期 2010.02.25
申请号 JP20080208072 申请日期 2008.08.12
申请人 KOBE STEEL LTD 发明人 MATSUO SHUJI;KISHI TOMOYA
分类号 H01L21/66 主分类号 H01L21/66
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