| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state imaging device capable of preventing the noise of an imaging signal caused by the entering of light from gaps between a contact part and an opening of a shading film with shunt wiring and a vertical transfer electrode in regard to a solid state imaging device connected with the vertical transfer electrode by the shunt wiring. Ž<P>SOLUTION: The solid state imaging device is equipped with a photoelectric conversion section 11 disposed like a matrix on a semiconductor substrate 10, a vertical transfer channel disposed between columns of the photoelectric conversion sections 11, the vertical transfer electrode 14 disposed between rows of the photoelectric conversion sections 11, the shading film 16 stacked on the vertical transfer electrode 14 via a first insulation film 15, and the shunt wiring 18 stacked on the shading film 16 via a second insulation film 17. A shading filter 4 formed in a peripheral area 103 of a periphery of an optical black part 102 is formed also on a contact area formed with the contact part 19 of the vertical transfer electrode 14 and the shunt wiring 18. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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