发明名称 Interposer chip, method of manufacturing the interposer chip, and multi-chip package having the interposer chip
摘要 An interposer chip in accordance includes an insulating layer, conductive patterns and a dummy pattern. The conductive patterns are formed on the insulating layer. The dummy pattern is formed on the insulating layer to suppress a bending of the insulating layer. Further, the dummy pattern can have first isolating grooves formed along peripherals of the conductive patterns to isolate the dummy pattern from the conductive patterns. Thus, the interposer chip is not vulnerable to being bent. Further, an electrical short between the conductive patterns through the dummy pattern caused by particles is substantially avoided.
申请公布号 US7667331(B2) 申请公布日期 2010.02.23
申请号 US20080217643 申请日期 2008.07.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM JONG-SEOK;BAN HYO-DONG
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
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