发明名称 |
Exposure scan and step direction optimization |
摘要 |
A lithography process to pattern a plurality of fields on a substrate is disclosed. The process includes scanning a first field along a first direction using a radiation beam. Thereafter, the processes steps to a second field adjacent the first field and located behind the first field when the first and second fields are viewed along the first direction. The second field is then scanned along the first direction using the radiation beam.
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申请公布号 |
US7666576(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20060461234 |
申请日期 |
2006.07.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIANG FU-JYE;SHIU LIN-HUNG;CHEN CHUN-KUANG;GAU TSAI-SHENG;LIN BURN JENG |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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