| 摘要 |
PURPOSE: A vapor deposition reactor and a method for forming a thin film using the same are provided to minimize the area or the volume of the reactor by filling materials in a chamber and preventing a substrate from exposing to the atmosphere of the chamber while the substrate passing through a reacting module. CONSTITUTION: A chamber(10) is filled with a first material. A plurality of reaction modules(20) are located in the chamber. A substrate passes through the reaction module by a relative movement to the reaction module. A second material is injected to the substrate through a injection unit(202). Exhaust units(201,203) remove a part of an absorption layer which are composed of materials absorbed on the substrate.
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