| 发明名称 |
Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands |
| 摘要 |
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
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| 申请公布号 |
US7666801(B2) |
申请公布日期 |
2010.02.23 |
| 申请号 |
US20080248544 |
申请日期 |
2008.10.09 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
VAARTSTRA BRIAN A.;QUICK TIMOTHY A. |
| 分类号 |
H01L21/469;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/316 |
主分类号 |
H01L21/469 |
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代理人 |
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| 主权项 |
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| 地址 |
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