发明名称 |
Integrated circuit comprising at least one capacitor and process for forming the capacitor |
摘要 |
An integrated circuit includes at least one capacitor that is formed on a layer provided with at least one first trench. The capacitor, which is provided with a dielectric layer that separates two electrodes, conforms to the shape of the first trench, but leaves a part of the first trench unfilled. A material capable of absorbing stresses associated with the displacements of the walls of the trench is placed in the trench to fill the part of the first trench. A second trench is formed at least partly surrounding the first trench. This second trench is also at least partly filled with a material capable of absorbing stresses associated with the displacements of the walls of the second trench. A void may be included in the stress absorbing material which fills either of the first or second trenches.
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申请公布号 |
US7667292(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20060415393 |
申请日期 |
2006.05.01 |
申请人 |
STMICROELECTRONICS S.A.;STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
GIRAUDIN JEAN-CHRISTOPHE;FIORI VINCENT;DELPECH PHILIPPE |
分类号 |
H01L27/08 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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